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MJE5731G

Manufacturer:

On Semiconductor

Mfr.Part #:

MJE5731G

Datasheet:
Description:

BJTs TO-220-3 Through Hole PNP 40 W Collector Base Voltage (VCBO):350 V Collector Emitter Voltage (VCEO):350 V Emitter Base Voltage (VEBO):5 V

ParameterValue
Voltage Rating (DC)-350 V
Length10.28 mm
Width4.82 mm
Max Operating Temperature150 °C
Min Operating Temperature-65 °C
Number of Pins3
Height15.75 mm
PackagingTube
Radiation HardeningNo
RoHSCompliant
PolarityPNP
REACH SVHCNo SVHC
Frequency10 MHz
Number of Elements1
Current Rating-1 A
Lifecycle StatusProduction (Last Updated: 2 months ago)
Max Power Dissipation40 W
Power Dissipation40 W
Max Collector Current1 A
Collector Emitter Breakdown Voltage350 V
Transition Frequency10 MHz
Element ConfigurationSingle
Max Frequency10 MHz
Collector Emitter Voltage (VCEO)350 V
Max Breakdown Voltage60 V
Gain Bandwidth Product10 MHz
Collector Base Voltage (VCBO)350 V
Collector Emitter Saturation Voltage1 V
Emitter Base Voltage (VEBO)5 V
hFE Min30
Schedule B8541290080
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 months ago)
Max Cutoff Collector Current1 mA
Transistor TypePNP

Stock: 6

Distributors
pcbx
Unit Price$1.21757
Ext.Price$1.21757
QtyUnit PriceExt.Price
1$1.21757$1.21757
10$1.00224$10.02240
25$0.94099$23.52475
50$0.88349$44.17450
100$0.75767$75.76700
300$0.72703$218.10900
500$0.69762$348.81000
1000$0.67066$670.66000